| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
MUR5005 |
Diode Switching 50V 50A 2-Pin DO-5 |
New Jersey Semiconductor |
| 1412 |
MUR5005R |
Diode Switching 50V 50A 2-Pin DO-5 |
New Jersey Semiconductor |
| 1413 |
MUR605CT |
6.0A, 50V ultra fast recovery rectifier |
MCC |
| 1414 |
MUR605CT |
Diode Switching 50V 6A 3-Pin(3+Tab) TO-220AB T/R |
New Jersey Semiconductor |
| 1415 |
MUR7005 |
70A, 50V ultra fast recovery rectifier |
MCC |
| 1416 |
MUR805 |
Diode Switching 50V 8A 2-Pin(2+Tab) TO-220AC |
New Jersey Semiconductor |
| 1417 |
MUR805 |
8A 50V Ultrafast Rectifier |
ON Semiconductor |
| 1418 |
MURH805CT |
8.0A, 50V ultra fast recovery rectifier |
MCC |
| 1419 |
MURS105 |
1A 50V Ultrafast Rectifier |
ON Semiconductor |
| 1420 |
MURS105T3 |
1A 50V Ultrafast Rectifier |
ON Semiconductor |
| 1421 |
NDP605A |
Trans MOSFET N-CH 50V 48A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 1422 |
NDP605AL |
Trans MOSFET N-CH 50V 48A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 1423 |
NJD2873 |
BIP DPAK NPN 2A 50V TR |
ON Semiconductor |
| 1424 |
NJD2873T4 |
BIP DPAK NPN 2A 50V TR |
ON Semiconductor |
| 1425 |
NJD2873T4G |
BIP DPAK NPN 2A 50V TR |
ON Semiconductor |
| 1426 |
NTE5209A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 50V. Zener test current Izt = 50mA. |
NTE Electronics |
| 1427 |
NTE5501 |
Silicon controlled rectifier (SCR), 16 Amp. Peak forward blocking voltage, peak reverse blocking voltage Vdrm,Vrsm(rep) = 50V. Forward current RMS It = 25A. |
NTE Electronics |
| 1428 |
NTE5521 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 50V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 1429 |
NTE5622 |
TRIAC, 10A. Repetitive peak off-state voltage Vdrm = 50V. RMS on-state current 8A. |
NTE Electronics |
| 1430 |
NTE5681 |
TRIAC, 25A. Repetitive peak off-state voltage Vdrm = 50V. RMS on-state current 25A. |
NTE Electronics |
| 1431 |
NTE5831 |
Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 50V. |
NTE Electronics |
| 1432 |
NTE5851 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. |
NTE Electronics |
| 1433 |
NTE5871 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. |
NTE Electronics |
| 1434 |
NTE5913 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 20A. |
NTE Electronics |
| 1435 |
NTE5941 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 15A. |
NTE Electronics |
| 1436 |
NTE5981 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 40A. |
NTE Electronics |
| 1437 |
NTE6021 |
Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A. |
NTE Electronics |
| 1438 |
NTE6049 |
Industrial silicon recfifier. Anode to case. Max peak reverse voltage 50V. Max forward current 70A. |
NTE Electronics |
| 1439 |
P600A |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS voltage 35V. Maximum DC blocking voltage 50V |
Wing Shing Computer Components |
| 1440 |
P600A |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS voltage 35V. Maximum DC blocking voltage 50V |
Wing Shing Computer Components |
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