No. |
Part Name |
Description |
Manufacturer |
1411 |
29W040 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory |
ST Microelectronics |
1412 |
2DA2018 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR |
Diodes |
1413 |
2DA2018-7 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR |
Diodes |
1414 |
2N1302 |
Germanium N-P-N low power transistor |
Mullard |
1415 |
2N1303 |
Germanium P-N-P low power transistor |
Mullard |
1416 |
2N1304 |
Germanium N-P-N low power transistor |
Mullard |
1417 |
2N1305 |
Germanium P-N-P low power transistor |
Mullard |
1418 |
2N1306 |
Germanium N-P-N low power transistor |
Mullard |
1419 |
2N1307 |
Germanium P-N-P low power transistor |
Mullard |
1420 |
2N1308 |
Germanium N-P-N low power transistor |
Mullard |
1421 |
2N1309 |
Germanium P-N-P low power transistor |
Mullard |
1422 |
2N1487 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
1423 |
2N1488 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
1424 |
2N1489 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
1425 |
2N1490 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
1426 |
2N1595 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
1427 |
2N1596 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
1428 |
2N1597 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
1429 |
2N1598 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
1430 |
2N1599 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
1431 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
1432 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
1433 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
1434 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
1435 |
2N1751 |
PNP Germanium power transistor, low saturation voltage |
Motorola |
1436 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
1437 |
2N1924 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
1438 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
1439 |
2N1925 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
1440 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
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