DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for RA

Datasheets found :: 82192
Page: | 44 | 45 | 46 | 47 | 48 | 49 | 50 | 51 | 52 |
No. Part Name Description Manufacturer
1411 2SC3245 900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 Isahaya Electronics Corporation
1412 2SC3245A 900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A Isahaya Electronics Corporation
1413 2SC3246 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 Isahaya Electronics Corporation
1414 2SC3297 Silicon NPN epitaxial power transistor, car radio, car stereo output stage amplifier applications TOSHIBA
1415 2SC3438 500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 Isahaya Electronics Corporation
1416 2SC3515 Transistor Silicon NPN Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications TOSHIBA
1417 2SC3580 900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 Isahaya Electronics Corporation
1418 2SC3581 900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 Isahaya Electronics Corporation
1419 2SC3672 TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS TOSHIBA
1420 2SC3804 NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range Mitsubishi Electric Corporation
1421 2SC3928A 200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 Isahaya Electronics Corporation
1422 2SC4154 150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. Isahaya Electronics Corporation
1423 2SC4155A 150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 Isahaya Electronics Corporation
1424 2SC4357 500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. Isahaya Electronics Corporation
1425 2SC5210 500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. Isahaya Electronics Corporation
1426 2SC5383 125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. Isahaya Electronics Corporation
1427 2SC5384 125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. Isahaya Electronics Corporation
1428 2SC5477 150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification Isahaya Electronics Corporation
1429 2SC5486 600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. Isahaya Electronics Corporation
1430 2SC6046 200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. Isahaya Electronics Corporation
1431 2SC838 FM RADIO AMP/ MIX CONV/ OSC IF AMP Etron Tech
1432 2SC838 Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. USHA India LTD
1433 2SC839 FM/AM RADIO RF AMP,CONV,OSC,IF AMP USHA India LTD
1434 2SC9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION USHA India LTD
1435 2SD1447 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 Isahaya Electronics Corporation
1436 2SD1753 Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Panasonic
1437 2SD1775 Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio) Panasonic
1438 2SD1776 Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Panasonic
1439 2SD1972 2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. Isahaya Electronics Corporation
1440 2SD2486 Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Panasonic


Datasheets found :: 82192
Page: | 44 | 45 | 46 | 47 | 48 | 49 | 50 | 51 | 52 |



© 2024 - www Datasheet Catalog com