No. |
Part Name |
Description |
Manufacturer |
1411 |
JANTX1N4112CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
1412 |
JANTXV1N4112C-1 |
Zener Voltage Regulator Diode |
Microsemi |
1413 |
JANTXV1N4112CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
1414 |
JDP2S12CR |
Radio-frequency switching diode |
TOSHIBA |
1415 |
JPS250PS12C |
Switching power supply. Max. power 250 W. Output voltage 12 V. Output current: 21.0 A (with 18 CFM); 17.0 A (convection cooled). |
International Power Sources |
1416 |
JRC-19F2A12C0.2 |
COMPOSANTS ELECTRONIQUES ELECTRONIC COMPONENTS |
etc |
1417 |
JRC-19F2A12C0.51 |
COMPOSANTS ELECTRONIQUES ELECTRONIC COMPONENTS |
etc |
1418 |
JRC-19F2C12C0.2 |
COMPOSANTS ELECTRONIQUES ELECTRONIC COMPONENTS |
etc |
1419 |
JRC-19F2C12C0.51 |
COMPOSANTS ELECTRONIQUES ELECTRONIC COMPONENTS |
etc |
1420 |
K4E640812C |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1421 |
K4E640812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
1422 |
K4E640812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1423 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
1424 |
K4E640812C-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
1425 |
K4E640812C-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1426 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
1427 |
K4E640812C-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
1428 |
K4E640812C-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1429 |
K4E640812C-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
1430 |
K4E640812C-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
1431 |
K4E640812C-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1432 |
K4E640812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
1433 |
K4E641612C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1434 |
K4E641612C-45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1435 |
K4E641612C-50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1436 |
K4E641612C-60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1437 |
K4E641612C-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1438 |
K4E641612C-T |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1439 |
K4E641612C-T45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1440 |
K4E641612C-T50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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