No. |
Part Name |
Description |
Manufacturer |
1411 |
IXTH12N90 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
1412 |
IXTM12N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
1413 |
IXTM12N45 |
12 AMPS/ 450-500V/ 0.4OM/0.5OM |
IXYS Corporation |
1414 |
IXTM12N50 |
12 AMPS/ 450-500V/ 0.4OM/0.5OM |
IXYS Corporation |
1415 |
IXTM12N90 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
1416 |
K6R1008C1A-JC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1417 |
K6R1008C1A-JI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1418 |
K6R1008C1A-TC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1419 |
K6R1008C1A-TI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1420 |
K6R1008C1C-JC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1421 |
K6R1008C1C-JI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1422 |
K6R1008C1C-TC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1423 |
K6R1008C1C-TI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1424 |
KF12N60F |
��VDSS=600V, ID=12A |
Korea Electronics (KEC) |
1425 |
KF12N60P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
1426 |
KF12N68F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
1427 |
KGF12N60FDA |
600V IGBT |
Korea Electronics (KEC) |
1428 |
KGT12N120NDH |
IGBT |
Korea Electronics (KEC) |
1429 |
KM4132G271AQ-12 |
128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 12ns |
Samsung Electronic |
1430 |
KM4132G271AQR-12 |
128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 12ns |
Samsung Electronic |
1431 |
KM681002CJI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1432 |
KM681002CLJ-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
1433 |
KM681002CLJI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
1434 |
KM681002CLT-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
1435 |
KM681002CLTI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
1436 |
KM681002CT-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1437 |
KM681002CTI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
1438 |
KM68257CJ-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
1439 |
KM68257CLJ-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
1440 |
KM68257CLP-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
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