| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
UPD6466GT |
ON-SCREEN CHARACTER DISPLAY CMOS IC FOR 512-CHARACTER, 12-ROW, 24-COLUMN, CAMERA-CONTAINED VCR |
NEC |
| 1412 |
UPD6467 |
ON-SCREEN CHARACTER DISPLAY CMOS IC FOR 512-CHARACTER, 12-ROW, 28-COLUMN, CAMERA-CONTAINED VCR |
NEC |
| 1413 |
UPD6467GR |
ON-SCREEN CHARACTER DISPLAY CMOS IC FOR 512-CHARACTER, 12-ROW, 28-COLUMN, CAMERA-CONTAINED VCR |
NEC |
| 1414 |
UR7HCTS2-P840 |
High-Performance, Low Power PS/2 Touch Screen Controller/Digitizer |
Semtech |
| 1415 |
UR7HCTS2-P840-FG |
High-Performance/ Low Power PS/2 Touch Screen Controller/Digitizer |
Semtech |
| 1416 |
UR7HCTS2-S840 |
High-Performance, Low Power Touch Screen Controller/Digitizer |
Semtech |
| 1417 |
UR7HCTS2-S840-FG |
High-Performance/ Low Power Touch Screen Controller/Digitizer |
Semtech |
| 1418 |
UR7HCTS2-U860 |
High-Performance USB Touch Screen Controller / Digitizer |
Semtech |
| 1419 |
UR7HCTS2-U860-DR |
High-Performance USB Touch Screen Controller / Digitizer |
Semtech |
| 1420 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1421 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1422 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1423 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1424 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1425 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1426 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1427 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1428 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1429 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1430 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1431 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1432 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1433 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1434 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1435 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1436 |
WM9705 |
TOUCHSCREEN CONTROLLER WITH AC'97 INTERFACE AND AUDIO CODEC. |
Wolfson |
| 1437 |
WM9705SEFL/RV |
Multimedia AC97 CODEC with Integrated Touch Screen Controller |
Wolfson |
| 1438 |
WM9705SEFL/V |
Multimedia AC97 CODEC with Integrated Touch Screen Controller |
Wolfson |
| 1439 |
WM9705SEFT/RV |
Multimedia AC97 CODEC with Integrated Touch Screen Controller |
Wolfson |
| 1440 |
WM9705SEFT/V |
Multimedia AC97 CODEC with Integrated Touch Screen Controller |
Wolfson |
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