| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
BAW78D |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 1412 |
BAW78M |
Silicon Switching Diode (Switching applications High breakdown voltage) |
Siemens |
| 1413 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 1414 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 1415 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 1416 |
BAY68 |
Silicon epitaxial planar diodes for fast switching applications |
AEG-TELEFUNKEN |
| 1417 |
BAY69 |
Silicon epitaxial planar diodes for fast switching applications |
AEG-TELEFUNKEN |
| 1418 |
BC140 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1419 |
BC140 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1420 |
BC140-10 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1421 |
BC140-16 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1422 |
BC140-6 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1423 |
BC140/BC160 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1424 |
BC141 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1425 |
BC141 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1426 |
BC141-10 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1427 |
BC141-16 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1428 |
BC141-6 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1429 |
BC141/BC161 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 1430 |
BC237 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 1431 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1432 |
BC238 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 1433 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1434 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 1435 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1436 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 1437 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 1438 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 1439 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 1440 |
BC309 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
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