| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
MGF1001BT |
Tape carrier microwave power GaAs fet |
Mitsubishi Electric Corporation |
| 1412 |
MGF1304A |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
Mitsubishi Electric Corporation |
| 1413 |
MGF1601B |
MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 1414 |
MGF1801 |
TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 1415 |
MGF1801B |
MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 1416 |
MGF1801BT |
TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 1417 |
MGF1801BT |
TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 1418 |
MGF1951A |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
| 1419 |
MGF1951A-01 |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
| 1420 |
MGF2407 |
MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 1421 |
MGF2407A |
Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 1422 |
MGF2415A |
Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 1423 |
MGF2430A |
Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 1424 |
MGF2445 |
450 mA Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 1425 |
MGF2445A |
Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 1426 |
MGFC1403 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type |
Mitsubishi Electric Corporation |
| 1427 |
MGFC1801 |
FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
Mitsubishi Electric Corporation |
| 1428 |
MHW1815 |
Microwave Bipolar Power Amplifier |
Motorola |
| 1429 |
MHW1815_D |
MHW1815 1805-1880 MHz, 15 W, 26 V, 32 dB RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
| 1430 |
MHW1915 |
Microwave Bipolar Power Amplifier |
Motorola |
| 1431 |
MHW1915_D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
| 1432 |
MHW1916 |
Microwave Bipolar Power Amplifier |
Motorola |
| 1433 |
MIB |
10 x 20 Ta2 N Microwave on Alumina |
Vishay |
| 1434 |
MIC |
20 x 40 Ta2 N Microwave on Alumina |
Vishay |
| 1435 |
MICROWAVE NOTE |
Microwave Semiconductors general explanatory notes |
Philips |
| 1436 |
MICROWAVE NOTE |
Microwave Semiconductors general explanatory notes |
Philips |
| 1437 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 1438 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 1439 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 1440 |
MID |
50 x 50 Ta2 N Microwave on Alumina |
Vishay |
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