| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
BDY82 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY80 |
SESCOSEM |
| 1412 |
BDY83 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY81 |
SESCOSEM |
| 1413 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 1414 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 1415 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
| 1416 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
| 1417 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 1418 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 1419 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 1420 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 1421 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
| 1422 |
BFQ51 |
Silicon wideband PNP transistor, NPN complements are BFR90 and BFR90A |
Philips |
| 1423 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 1424 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 1425 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
| 1426 |
BP100 |
Silicon Photo Element |
Siemens |
| 1427 |
BP100 |
Silicon Photo element |
Siemens |
| 1428 |
BPX28 |
Silicon photo-electronic control unit containing: one silicon photo element, one silicon NPN transistor and two silicon diodes, suitable for direct relay driving |
AEG-TELEFUNKEN |
| 1429 |
BPX34 |
Silicon P/N photo elements line containing 50 integrated elements for readout array with fine scanning |
AEG-TELEFUNKEN |
| 1430 |
BPX34 |
Silicon P/N photo elements line containing 50 integrated elements for readout array with fine scanning |
AEG-TELEFUNKEN |
| 1431 |
BPX79 |
Silizium-Fotoelement mit erhohter Blauempfindlichkeit Silicon Photovoltaic Cell with Enhanced Blue Sensitivity |
Siemens |
| 1432 |
BPY11 |
Silicon Photo Element |
Siemens |
| 1433 |
BPY11 |
Silicon Photo element |
Siemens |
| 1434 |
BPY11 |
Silizium-Fotoelement Silicon Photovoltaic Cell |
Siemens |
| 1435 |
BPY11P |
Silizium-Fotoelement Silicon Photovoltaic Cell |
Siemens |
| 1436 |
BPY11PIV |
Silizium-Fotoelement Silicon Photovoltaic Cell |
Siemens |
| 1437 |
BPY11PV |
Silizium-Fotoelement Silicon Photovoltaic Cell |
Siemens |
| 1438 |
BPY43 |
Silicon Photo Element |
Siemens |
| 1439 |
BPY43 |
Silicon photo elements with blocking behavior in a miniature glass housing |
Siemens |
| 1440 |
BPY44 |
Silicon Photo Element |
Siemens |
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