| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
P2202ZC |
90 V, four-port longitudinal two-chip protector |
Teccor Electronics |
| 1412 |
P2222 |
General purpose transistor. Vcbo = 60V, Vceo = 30V, Vebo = 5V, Ic = 600mA, Pc = 625mW. |
USHA India LTD |
| 1413 |
P2222A |
Transistors |
USHA India LTD |
| 1414 |
P22VB |
Silicon Planar Power Zener Diodes |
Honey Technology |
| 1415 |
P22VB |
Silicon Planar Power Zener Diodes |
Semtech |
| 1416 |
PDI1394P22 |
3-port physical layer interface |
Philips |
| 1417 |
PDI1394P22BD |
3-port physical layer interface |
Philips |
| 1418 |
PHP222 |
Dual P-channel enhancement mode MOS transistor |
Philips |
| 1419 |
PHP222NQ04LT |
PHP/PHB222NQ04LT; N-channel Trenchmos (tm) logic level FET |
Philips |
| 1420 |
PHP222NQ04LT |
N-channel Trenchmos (tm) logic level FET |
Philips |
| 1421 |
PHP225 |
Dual P-channel intermediate level FET |
Nexperia |
| 1422 |
PHP225 |
Dual P-channel intermediate level FET |
NXP Semiconductors |
| 1423 |
PHP225 |
Dual P-channel enhancement mode MOS transistor |
Philips |
| 1424 |
PHP225NQ04T |
PHP/PHB225NQ04T; N-channel Trenchmos (tm) standard level FET |
Philips |
| 1425 |
PHP225NQ04T |
N-channel Trenchmos (tm) standard level FET |
Philips |
| 1426 |
PP225D060 |
POW-R-PAK 200A / 1200V 3 phase IGBT Assembly |
Powerex Power Semiconductors |
| 1427 |
PP225D120 |
POW-R-PAK 225A / 1200V Half Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 1428 |
Q62702-P22 |
NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays |
Siemens |
| 1429 |
Q62702-P228 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 1430 |
Q62702-P229 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 1431 |
QPP2209 |
X-Band 40 Watt Limiter in Plastic 4x4 mm OVM QFN |
Qorvo |
| 1432 |
R15KP22 |
Diode TVS Single Uni-Dir 22V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 1433 |
R15KP220 |
Diode TVS Single Uni-Dir 220V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 1434 |
R15KP220A |
Diode TVS Single Uni-Dir 220V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 1435 |
R15KP220C |
Diode TVS Single Bi-Dir 220V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 1436 |
R15KP220CA |
Diode TVS Single Bi-Dir 220V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 1437 |
R15KP22A |
Diode TVS Single Uni-Dir 22V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 1438 |
R15KP22C |
Diode TVS Single Bi-Dir 22V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 1439 |
R15KP22CA |
Diode TVS Single Bi-Dir 22V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 1440 |
RFP22N10 |
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
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