| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
1N827 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 1412 |
1N827 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 1413 |
1N827 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 1414 |
1N827 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1415 |
1N827 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 1416 |
1N827-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 1417 |
1N827-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1418 |
1N827A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 1419 |
1N827A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 1420 |
1N827A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 1421 |
1N827A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 1422 |
1N827A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1423 |
1N827A |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 1424 |
1N827A-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1425 |
1N827A-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1426 |
1N827UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 1427 |
1N827UR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1428 |
1N828 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 1429 |
1N828 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 1430 |
1N828-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 1431 |
1N828-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1432 |
1N828A |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 1433 |
1N828UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 1434 |
1N828UR-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1435 |
1N828UR-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 1436 |
1N829 |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 1437 |
1N829 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 1438 |
1N829 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 1439 |
1N829 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 1440 |
1N829 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
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