| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
2N930A |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1412 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 1413 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1414 |
2N997 |
NPN silicon transistor darlington amplifiers |
Sprague |
| 1415 |
2N998 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 1416 |
2N999 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 1417 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1418 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1419 |
2SA0838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1420 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1421 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1422 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1423 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 1424 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 1425 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 1426 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 1427 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 1428 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1429 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
| 1430 |
2SA1022 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1431 |
2SA1025 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1432 |
2SA1029 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1433 |
2SA1030 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1434 |
2SA1031 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1435 |
2SA1032 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1436 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 1437 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 1438 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 1439 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
| 1440 |
2SA1048L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
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