No. |
Part Name |
Description |
Manufacturer |
14191 |
M29W160ET90N6T |
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY |
ST Microelectronics |
14192 |
M29W160ET90ZA6 |
90ns; V(in/out): -0.6 to +0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory |
SGS Thomson Microelectronics |
14193 |
M29W160ET90ZA6 |
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
ST Microelectronics |
14194 |
M29W160ET90ZA6E |
90ns; V(in/out): -0.6 to +0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory |
SGS Thomson Microelectronics |
14195 |
M29W160ET90ZA6E |
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY |
ST Microelectronics |
14196 |
M29W160ET90ZA6F |
90ns; V(in/out): -0.6 to +0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory |
SGS Thomson Microelectronics |
14197 |
M29W160ET90ZA6F |
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
ST Microelectronics |
14198 |
M29W160ET90ZA6T |
90ns; V(in/out): -0.6 to +0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory |
SGS Thomson Microelectronics |
14199 |
M29W160ET90ZA6T |
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY |
ST Microelectronics |
14200 |
M35045-160SP |
SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS |
Mitsubishi Electric Corporation |
14201 |
M37220M3-160SP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER with ON-SCREEN DISPLAY CONTROLLER�� |
Mitsubishi Electric Corporation |
14202 |
M37272M8-160SP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER������ |
Mitsubishi Electric Corporation |
14203 |
M372F160(8)0DJ(T)0-C |
16M x 72 DRAM DIMM with ECC Using 16M x 4, 4K & 8K Refresh, 3.3V Data Sheet |
Samsung Electronic |
14204 |
M372F160(8)0DJ(T)0-C EDO MODE |
16M x 72 DRAM DIMM with ECC Using 16M x 4, 4K & 8K Refresh, 3.3V Data Sheet |
Samsung Electronic |
14205 |
M372V160(8)0DJ(T)0-C FAST PAGE MODE |
16M x 72 DRAM DIMM with ECC Using 16M x 4, 4K & 8K Refresh, 3.3V Data Sheet |
Samsung Electronic |
14206 |
M374F160(8)0DJ(T)3-C EDO MODE WITHOUT BU |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V Data Sheet |
Samsung Electronic |
14207 |
M38222M4-160FP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
14208 |
M38254M6160GP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
14209 |
M38510/31601BEA |
4-Bit Bistable Latches 16-CDIP -55 to 125 |
Texas Instruments |
14210 |
M3P100A-160 |
High Power Standard Recovery Rectifiers - Three Phase Devices |
America Semiconductor |
14211 |
M3P75A-160 |
High Power Standard Recovery Rectifiers - Three Phase Devices |
America Semiconductor |
14212 |
M41ST87W |
5.0, 3.3, OR 3.0V, 1280 Bit (160 X8) Secure Serial RTC and NVRAM Supervisor with Tamper Detection |
ST Microelectronics |
14213 |
M41ST87WMX6 |
5.0, 3.3, OR 3.0V, 1280 Bit (160 X8) Secure Serial RTC and NVRAM Supervisor with Tamper Detection |
ST Microelectronics |
14214 |
M41ST87WMX6TR |
5.0, 3.3, OR 3.0V, 1280 Bit (160 X8) Secure Serial RTC and NVRAM Supervisor with Tamper Detection |
ST Microelectronics |
14215 |
M41ST87Y |
5.0, 3.3, OR 3.0V, 1280 Bit (160 X8) Secure Serial RTC and NVRAM Supervisor with Tamper Detection |
ST Microelectronics |
14216 |
M41ST87YMX6 |
5.0, 3.3, OR 3.0V, 1280 Bit (160 X8) Secure Serial RTC and NVRAM Supervisor with Tamper Detection |
ST Microelectronics |
14217 |
M41ST87YMX6TR |
5.0, 3.3, OR 3.0V, 1280 Bit (160 X8) Secure Serial RTC and NVRAM Supervisor with Tamper Detection |
ST Microelectronics |
14218 |
M4A3-256/160-10YC |
High Performance E 2 CMOS In-System Programmable Logic |
Lattice Semiconductor |
14219 |
M4A3-256/160-10YI |
High Performance E 2 CMOS In-System Programmable Logic |
Lattice Semiconductor |
14220 |
M4A3-256/160-12YI |
High Performance E 2 CMOS In-System Programmable Logic |
Lattice Semiconductor |
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