| No. |
Part Name |
Description |
Manufacturer |
| 14221 |
EV2014 |
GAS GAUGE WITH 1-WIRE (DQ) INTERFACE, 5 LED DRIVERS AND CONTROL SIGNALS FOR THE BQ2004 FAST CHARGE I |
Texas Instruments |
| 14222 |
EV2014 |
GAS GAUGE WITH 1-WIRE (DQ) INTERFACE, 5 LED DRIVERS AND CONTROL SIGNALS FOR THE BQ2004 FAST CHARGE I |
Texas Instruments |
| 14223 |
EV2014X |
GAS GAUGE WITH 1-WIRE (DQ) INTERFACE, 5 LED DRIVERS AND CONTROL SIGNALS FOR THE BQ2004 FAST CHARGE I |
Texas Instruments |
| 14224 |
EV2014X |
GAS GAUGE WITH 1-WIRE (DQ) INTERFACE, 5 LED DRIVERS AND CONTROL SIGNALS FOR THE BQ2004 FAST CHARGE I |
Texas Instruments |
| 14225 |
EV2050 |
GAS GAUGE WITH 1-WIRE (DQ) INTERFACE AND 5 LED DRIVERS |
Texas Instruments |
| 14226 |
EV2050 |
GAS GAUGE WITH 1-WIRE (DQ) INTERFACE AND 5 LED DRIVERS |
Texas Instruments |
| 14227 |
EVAL6393FB |
Low voltage full bridge reference design board featuring L6393 advanced high-voltage gate driver |
ST Microelectronics |
| 14228 |
EVALSTGAP1S |
Demonstration board for gapDRIVE: galvanically isolated single high voltage gate driver |
ST Microelectronics |
| 14229 |
EVALSTGAP1S |
Demonstration board for gapDRIVE: galvanically isolated single high voltage gate driver |
ST Microelectronics |
| 14230 |
EVALSTGAP1S |
Demonstration board for gapDRIVE: galvanically isolated single high voltage gate driver |
ST Microelectronics |
| 14231 |
EVB3013A |
W3013 Indirect Quadrature Modulator with Gain Control |
Agere Systems |
| 14232 |
EVDD404 |
IXDD404 Gate Driver IC Evaluation Board |
Directed Energy |
| 14233 |
EVDD408 |
IXDD408 And IXDD414 Gate Driver IC Evaluation Boards |
Directed Energy |
| 14234 |
EVDD414 |
IXDD408 And IXDD414 Gate Driver IC Evaluation Boards |
Directed Energy |
| 14235 |
EVDD415 |
IXDD415 High Frequency Gate Driver IC Evaluation Board |
Directed Energy |
| 14236 |
EVDD415 |
High frequency gate driver IC evaluation board |
IXYS |
| 14237 |
EVIC420 |
DEIC420 High Frequency Gate Driver IC Evaluation Board |
Directed Energy |
| 14238 |
F1001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 14239 |
F100101 |
-4.2 V to -5.7 V, triple 5-input OR/NOR gate |
National Semiconductor |
| 14240 |
F100102 |
-4.2 V to -5.7 V, quint 2-input OR/NOR gate |
National Semiconductor |
| 14241 |
F100104 |
-4.2 V to -5.7 V, quint AND/NAND gate |
National Semiconductor |
| 14242 |
F100107 |
-4.2 V to -5.7 V, Low power exclusive OR/NOR gate |
National Semiconductor |
| 14243 |
F100117 |
-4.2 V to -5.7 V, triple 2-wide OA/OAI gate |
National Semiconductor |
| 14244 |
F100118 |
-4.2 V to -5.7 V, 5-wide 5,4,4,4,2 OA/OAI gate |
National Semiconductor |
| 14245 |
F1001C |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 14246 |
F1002 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 14247 |
F1003 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 14248 |
F100301 |
-4.2 V to -5.7 V, Low power triple OR-NOR gate |
National Semiconductor |
| 14249 |
F100302 |
-4.2 V to -5.7 V, Low power 2-input OR/NOR gate |
National Semiconductor |
| 14250 |
F100304 |
-4.2 V to -5.7 V, low power quint AND/NAND gate |
National Semiconductor |
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