| No. |
Part Name |
Description |
Manufacturer |
| 14311 |
2N6422 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 14312 |
2N6423 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 14313 |
2N6423 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 14314 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 14315 |
2N6423 |
POWER TRANSISTORS(35W) |
MOSPEC Semiconductor |
| 14316 |
2N6423 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 14317 |
2N6424 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 14318 |
2N6424 |
PNP transistor, 225V, 0.25A |
SemeLAB |
| 14319 |
2N6425 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 14320 |
2N6426 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 14321 |
2N6426 |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14322 |
2N6426-D |
Darlington Transistors NPN Silicon |
ON Semiconductor |
| 14323 |
2N6426_D26Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14324 |
2N6426_D74Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14325 |
2N6427 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 14326 |
2N6427 |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14327 |
2N6427 |
NPN Darlington transistor |
Philips |
| 14328 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
| 14329 |
2N6427_D26Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14330 |
2N6427_D27Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14331 |
2N6427_D75Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14332 |
2N6428 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14333 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14334 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14335 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14336 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14337 |
2N643 |
Germanium PNP Transistor |
Motorola |
| 14338 |
2N6430 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14339 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
| 14340 |
2N6431 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| | | |
