No. |
Part Name |
Description |
Manufacturer |
14371 |
2N6427 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
14372 |
2N6427 |
NPN Darlington Transistor |
Fairchild Semiconductor |
14373 |
2N6427 |
NPN Darlington transistor |
Philips |
14374 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
14375 |
2N6427_D26Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
14376 |
2N6427_D27Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
14377 |
2N6427_D75Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
14378 |
2N6428 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
14379 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
14380 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
14381 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
14382 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
14383 |
2N643 |
Germanium PNP Transistor |
Motorola |
14384 |
2N6430 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
14385 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
14386 |
2N6431 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
14387 |
2N6432 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
14388 |
2N6433 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
14389 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
14390 |
2N6436 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
14391 |
2N6436 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
14392 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
14393 |
2N6436A |
Silicon PNP Power Transistor |
IPRS Baneasa |
14394 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
14395 |
2N6437 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
14396 |
2N6437 |
POWER TRANSISTORS PNP SILICON |
ON Semiconductor |
14397 |
2N6437 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
14398 |
2N6437-D |
High-Power PNP Silicon Transistors |
ON Semiconductor |
14399 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
14400 |
2N6437A |
Silicon PNP Power Transistor |
IPRS Baneasa |
| | | |