DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 120

Datasheets found :: 28855
Page: | 477 | 478 | 479 | 480 | 481 | 482 | 483 | 484 | 485 |
No. Part Name Description Manufacturer
14401 KM416C1204BT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
14402 KM416C1204BT-7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
14403 KM416C1204BT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
14404 KM416C1204BT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
14405 KM416C1204BT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
14406 KM416C1204BT-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
14407 KM416C1204C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
14408 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
14409 KM416C1204CJ-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
14410 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
14411 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
14412 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
14413 KM416C1204CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
14414 KM416C1204CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
14415 KM416C1204CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
14416 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
14417 KM416C1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
14418 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
14419 KM416C1204CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
14420 KM416C1204CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
14421 KM416C1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
14422 KM416C1204CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
14423 KM416C1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
14424 KM416C1204CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
14425 KM416C1204CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
14426 KM416C1204CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
14427 KM416C1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
14428 KM416C1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
14429 KM416C1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
14430 KM416S1120D 512K x 16bit x 2 Banks Synchronous DRAM LVTTL etc


Datasheets found :: 28855
Page: | 477 | 478 | 479 | 480 | 481 | 482 | 483 | 484 | 485 |



© 2024 - www Datasheet Catalog com