| No. |
Part Name |
Description |
Manufacturer |
| 1441 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 1442 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 1443 |
81720-20 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 1444 |
81922-18 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 1445 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 1446 |
82023-10 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 1447 |
82023-16 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 1448 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1449 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1450 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1451 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1452 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 1453 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 1454 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 1455 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 1456 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 1457 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 1458 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1459 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1460 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1461 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1462 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1463 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1464 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1465 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 1466 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 1467 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1468 |
ACS102-5T1 |
AC LINE SWITCH |
SGS Thomson Microelectronics |
| 1469 |
ACS102-5TA |
AC LINE SWITCH |
SGS Thomson Microelectronics |
| 1470 |
ACS102-5TX |
AC LINE SWITCH |
SGS Thomson Microelectronics |
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