No. |
Part Name |
Description |
Manufacturer |
1441 |
MX651DW |
Telephone subscriber pulse metering & anti fraud tone processor |
MXCOM |
1442 |
MX651P |
Telephone subscriber pulse metering & anti fraud tone processor |
MXCOM |
1443 |
N7489 |
64-BIT read/write memory (RAM) |
Signetics |
1444 |
N7489B |
64-BIT read/write memory (RAM) |
Signetics |
1445 |
NBC82851N |
1 W, 256k bubble memory controller |
National Semiconductor |
1446 |
NBM2011 |
100 KHz, 1M x 1 magnetic bubble memory device |
National Semiconductor |
1447 |
NE41137 |
N-Channel GaAs Dual Gate MES FET |
California Eastern Laboratories |
1448 |
NKS. |
Fusible Type Metal Film Resistors, Fusible resistor for constant current designed for overload protection, Flame retardant coating, Defined switch-off behavior |
Vishay |
1449 |
NM93C56EM |
Electrically Erasable Programmable Memories |
National Semiconductor |
1450 |
NM93C56EN |
Electrically Erasable Programmable Memories |
National Semiconductor |
1451 |
NM93C56M |
Electrically Erasable Programmable Memories |
National Semiconductor |
1452 |
NM93C56MM |
Electrically Erasable Programmable Memories |
National Semiconductor |
1453 |
NM93C56MN |
Electrically Erasable Programmable Memories |
National Semiconductor |
1454 |
NM93C56N |
Electrically Erasable Programmable Memories |
National Semiconductor |
1455 |
NM93C66EM |
Electrically Erasable Programmable Memories |
National Semiconductor |
1456 |
NM93C66EN |
Electrically Erasable Programmable Memories |
National Semiconductor |
1457 |
NM93C66M |
Electrically Erasable Programmable Memories |
National Semiconductor |
1458 |
NM93C66MM |
Electrically Erasable Programmable Memories |
National Semiconductor |
1459 |
NM93C66MN |
Electrically Erasable Programmable Memories |
National Semiconductor |
1460 |
NM93C66N |
Electrically Erasable Programmable Memories |
National Semiconductor |
1461 |
NMA....SI |
Fusible Type Metal Film Resistors, Fusible resistor for constant current designed for overload protection, Flame retardant coating, Defined switch-off behavior |
Vishay |
1462 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1463 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1464 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1465 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1466 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1467 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1468 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1469 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1470 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
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