| No. |
Part Name |
Description |
Manufacturer |
| 1441 |
BF173B |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 1442 |
BF180 |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 1443 |
BF181 |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 1444 |
BF182 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 10 hFE. |
Continental Device India Limited |
| 1445 |
BF184 |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 1446 |
BF185 |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 1447 |
BF200 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 15 - 40 hFE. |
Continental Device India Limited |
| 1448 |
BF200 |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 1449 |
BF214 |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 1450 |
BF215 |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 1451 |
BF257 |
1.000W General Purpose NPN Metal Can Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1452 |
BF258 |
1.000W General Purpose NPN Metal Can Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1453 |
BF259 |
1.000W General Purpose NPN Metal Can Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1454 |
BF272A |
Silicon PNP high-frequency transistor, metal case |
IPRS Baneasa |
| 1455 |
BF272B |
Silicon PNP high-frequency transistor, metal case |
IPRS Baneasa |
| 1456 |
BF316A |
Silicon PNP high-frequency transistor, metal case |
IPRS Baneasa |
| 1457 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 1458 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 1459 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 1460 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 1461 |
BFQ32C |
Gold-metallized PNP silicon RF transistor |
Philips |
| 1462 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 1463 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 1464 |
BFR95 |
NPN resistance stabilized transistor in a TO-39 metal anvelope |
Philips |
| 1465 |
BFT31 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. |
SemeLAB |
| 1466 |
BFT32 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1467 |
BFT53 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 1468 |
BFT57 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 1469 |
BFT59 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 1470 |
BFT60 |
Bipolar NPN Device in A Hermetically sealed TO39 Metal Package |
SemeLAB |
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