| No. |
Part Name |
Description |
Manufacturer |
| 1441 |
1RM40 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1442 |
1RM60 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1443 |
1RM80 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1444 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 1445 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 1446 |
1S1832 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1447 |
1S1834 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1448 |
1S1835 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1449 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 1450 |
1S1838 |
Silicon diffused junction high voltage rectifier 45kV 1A |
TOSHIBA |
| 1451 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1452 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1453 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 1454 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1455 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1456 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1457 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1458 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1459 |
1S84H |
Silicon Diffused for High Voltage Switching |
Hitachi Semiconductor |
| 1460 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 1461 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 1462 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 1463 |
1S922TR |
High Conductance Fast Diode |
Fairchild Semiconductor |
| 1464 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 1465 |
1S923TR |
High Conductance Fast Diode |
Fairchild Semiconductor |
| 1466 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 1467 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1468 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1469 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1470 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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