No. |
Part Name |
Description |
Manufacturer |
1441 |
BDX64A |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
1442 |
BDX64B |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
1443 |
BDX64C |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
1444 |
BDX65 |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
1445 |
BDX65A |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
1446 |
BDX65B |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
1447 |
BDX65C |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
1448 |
BDX66 |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
1449 |
BDX66A |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
1450 |
BDX66B |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
1451 |
BDX66C |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
1452 |
BDX67 |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
1453 |
BDX67A |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
1454 |
BDX67B |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
1455 |
BDX67C |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
1456 |
BDY80 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY82 |
SESCOSEM |
1457 |
BDY81 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY83 |
SESCOSEM |
1458 |
BDY82 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY80 |
SESCOSEM |
1459 |
BDY83 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY81 |
SESCOSEM |
1460 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
1461 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
1462 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
1463 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
1464 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
1465 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
1466 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
1467 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
1468 |
BLU50 |
VHF/UHF PUSH-PULL Power NPN Transistor for use in military and professional wideband applications in the 30 to 400MHz range |
Philips |
1469 |
BSO612CV |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL |
Infineon |
1470 |
BSO615C |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.11/0.30Ohm, Id(N) = 3.2A, Id(P) = -2.0A, LL |
Infineon |
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