No. |
Part Name |
Description |
Manufacturer |
1441 |
25C080 |
The 25C080 is a 8K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data |
Microchip |
1442 |
25C160 |
The 25C160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data |
Microchip |
1443 |
25C640 |
The 25C640 is a 64K-bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data |
Microchip |
1444 |
25GQ045 |
35V 45A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
1445 |
25GQ045SCS |
35A 45V Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
1446 |
25L01 |
256x1 static Read/Write Random Access Memory |
Signetics |
1447 |
25L01B |
256x1 static Read/Write Random Access Memory |
Signetics |
1448 |
25L01I |
256x1 static Read/Write Random Access Memory |
Signetics |
1449 |
25LC080 |
The 25LC080 is a 8K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data |
Microchip |
1450 |
25LC160 |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and dat |
Microchip |
1451 |
2602 |
1024-BIT random access Read/Write static memory |
Signetics |
1452 |
2602B |
1024-BIT random access Read/Write static memory |
Signetics |
1453 |
2602I |
1024-BIT random access Read/Write static memory |
Signetics |
1454 |
2623CS |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
1455 |
2623CSA |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
1456 |
2623N |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
1457 |
2623Y |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
1458 |
2625C |
40 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
1459 |
26LS31 |
QUAD EIA.422 LINE DRIVER WITH THREE.STATE OUTPUTS |
Motorola |
1460 |
26LS32 |
QUAD EIA-422/3 LINE RECEIVER WITH THREE.STATE OUTPUTS |
Motorola |
1461 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
1462 |
28C256 |
5 Volt / Byte Alterable E2PROM |
Xicor |
1463 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
1464 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
1465 |
299D |
Solid Tantalum Capacitors, Solid-Electrolyte TANTALEX Capacitors, Tripole Triple-Lead, Resin-Coated |
Vishay |
1466 |
29C040 |
4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory |
Atmel |
1467 |
29LS18 |
Quad D Register With Standard and Three-State Outputs |
Monolithic Memories |
1468 |
2AC128 |
Application Note - Symmetrical transformer amplifier |
COMPELEC |
1469 |
2AC132 |
Application Note - Symmetrical transformer amplifier |
COMPELEC |
1470 |
2AD149 |
Application Note - Power amplifier |
COMPELEC |
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