| No. |
Part Name |
Description |
Manufacturer |
| 14431 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14432 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14433 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14434 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14435 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14436 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14437 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14438 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14439 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14440 |
1S40 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 14441 |
1S50 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 14442 |
1S60 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 14443 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 14444 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 14445 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 14446 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14447 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14448 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14449 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14450 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14451 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14452 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14453 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14454 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14455 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14456 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14457 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14458 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14459 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14460 |
1S77 |
Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damper |
Hitachi Semiconductor |
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