| No. |
Part Name |
Description |
Manufacturer |
| 14461 |
TBC338 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14462 |
TBC546 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14463 |
TBC547 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14464 |
TBC548 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14465 |
TBC549 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14466 |
TBC550 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14467 |
TBC556 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14468 |
TBC557 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14469 |
TBC558 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14470 |
TBC559 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14471 |
TBC560 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 14472 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 14473 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 14474 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 14475 |
TD12 |
Silicon reference amplifier with NPN-Si epitaxy planar transistor |
ITT Industries |
| 14476 |
TD13 |
Silicon reference amplifier with NPN-Si epitaxy planar transistor |
ITT Industries |
| 14477 |
TD15 |
Silicon reference amplifier with NPN-Si epitaxy planar transistor |
ITT Industries |
| 14478 |
TD162 |
Silicon High Power general purpose epibase darlington PNP transistor - metal case |
IPRS Baneasa |
| 14479 |
TD162 |
Silicon PNP EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 14480 |
TD162/1 |
Silicon High Power general purpose epibase darlington PNP transistor - metal case |
IPRS Baneasa |
| 14481 |
TD162/1 |
Silicon PNP EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 14482 |
TD162A |
Silicon High Power general purpose epibase darlington PNP transistor - metal case |
IPRS Baneasa |
| 14483 |
TD162A |
Silicon PNP EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 14484 |
TD162B |
Silicon High Power general purpose epibase darlington PNP transistor - metal case |
IPRS Baneasa |
| 14485 |
TD162B |
Silicon PNP EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 14486 |
TD162C |
Silicon High Power general purpose epibase darlington PNP transistor - metal case |
IPRS Baneasa |
| 14487 |
TD162C |
Silicon PNP EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 14488 |
TD163 |
Silicon High Power general purpose epibase darlington NPN transistor - metal case |
IPRS Baneasa |
| 14489 |
TD163 |
Silicon NPN EPIBASE Darlington Power Transistor |
IPRS Baneasa |
| 14490 |
TD163/1 |
Silicon High Power general purpose epibase darlington NPN transistor - metal case |
IPRS Baneasa |
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