No. |
Part Name |
Description |
Manufacturer |
14491 |
TDA7335 |
STEREO PREAMP + AMS + DOLBY B* NOISE REDUCTION PROCESSOR |
SGS Thomson Microelectronics |
14492 |
TDA7335 |
STEREO PREAMPLIFIER + AMS + DOLBY-B |
ST Microelectronics |
14493 |
TDA7336 |
STEREO PREAMP + AMS + DOLBY B* NOISE REDUCTION PROCESSOR |
SGS Thomson Microelectronics |
14494 |
TDA7336 |
STEREO PREAMP + AMS + DOLBY NOISE REDUCTION PROCESSOR |
ST Microelectronics |
14495 |
TDA7336D |
STEREO PREAMP + AMS + DOLBY NOISE REDUCTION PROCESSOR |
SGS Thomson Microelectronics |
14496 |
TDA7336D |
STEREO PREAMP + AMS + DOLBY NOISE REDUCTION PROCESSOR |
ST Microelectronics |
14497 |
TEST-CIRCUITS |
Test circuits for Breakdown voltage and Drain-Source Current, Gate-Source Leakage Current, Drain-Source on-Resistance, etc. |
Samsung Electronic |
14498 |
TIP100 |
60 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14499 |
TIP101 |
80 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14500 |
TIP102 |
100 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14501 |
TIP105 |
PNP (HIGH DC CURRENT GAIN MIN |
Samsung Electronic |
14502 |
TIP106 |
-80 V, -8 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14503 |
TIP107 |
-100 V, -8 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14504 |
TIP110 |
60 V, 2 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14505 |
TIP111 |
80 V, 2 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14506 |
TIP112 |
100 V, 2 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14507 |
TIP115 |
-60 V, -2 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14508 |
TIP116 |
-80 V, -2 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14509 |
TIP117 |
-100 V, -2 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14510 |
TIP120 |
NPN (MEDIUM POWER LINEAR SWITCHING APPLICATIONS) |
Samsung Electronic |
14511 |
TIP121 |
80 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14512 |
TIP122 |
100 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14513 |
TIP125 |
-60 V, -5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14514 |
TIP126 |
PNP (MEDIUM POWER LINEAR SWITCHING APPLICATIONS) |
Samsung Electronic |
14515 |
TIP127 |
-100 V, -5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14516 |
TIP140F |
60 V, 5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14517 |
TIP140T |
60 V, 10 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14518 |
TIP141F |
60 V, 5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
14519 |
TIP141T |
60 V, 10 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
14520 |
TIP142F |
60 V, 5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
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