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Datasheets for AMS

Datasheets found :: 14624
Page: | 480 | 481 | 482 | 483 | 484 | 485 | 486 | 487 | 488 |
No. Part Name Description Manufacturer
14491 TDA7335 STEREO PREAMP + AMS + DOLBY B* NOISE REDUCTION PROCESSOR SGS Thomson Microelectronics
14492 TDA7335 STEREO PREAMPLIFIER + AMS + DOLBY-B ST Microelectronics
14493 TDA7336 STEREO PREAMP + AMS + DOLBY B* NOISE REDUCTION PROCESSOR SGS Thomson Microelectronics
14494 TDA7336 STEREO PREAMP + AMS + DOLBY NOISE REDUCTION PROCESSOR ST Microelectronics
14495 TDA7336D STEREO PREAMP + AMS + DOLBY NOISE REDUCTION PROCESSOR SGS Thomson Microelectronics
14496 TDA7336D STEREO PREAMP + AMS + DOLBY NOISE REDUCTION PROCESSOR ST Microelectronics
14497 TEST-CIRCUITS Test circuits for Breakdown voltage and Drain-Source Current, Gate-Source Leakage Current, Drain-Source on-Resistance, etc. Samsung Electronic
14498 TIP100 60 V, 8 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14499 TIP101 80 V, 8 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14500 TIP102 100 V, 8 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14501 TIP105 PNP (HIGH DC CURRENT GAIN MIN Samsung Electronic
14502 TIP106 -80 V, -8 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14503 TIP107 -100 V, -8 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14504 TIP110 60 V, 2 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14505 TIP111 80 V, 2 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14506 TIP112 100 V, 2 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14507 TIP115 -60 V, -2 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14508 TIP116 -80 V, -2 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14509 TIP117 -100 V, -2 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14510 TIP120 NPN (MEDIUM POWER LINEAR SWITCHING APPLICATIONS) Samsung Electronic
14511 TIP121 80 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14512 TIP122 100 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14513 TIP125 -60 V, -5 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14514 TIP126 PNP (MEDIUM POWER LINEAR SWITCHING APPLICATIONS) Samsung Electronic
14515 TIP127 -100 V, -5 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14516 TIP140F 60 V, 5 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14517 TIP140T 60 V, 10 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14518 TIP141F 60 V, 5 A, PNP epitaxial silicon darlington transistor Samsung Electronic
14519 TIP141T 60 V, 10 A, NPN epitaxial silicon darlington transistor Samsung Electronic
14520 TIP142F 60 V, 5 A, PNP epitaxial silicon darlington transistor Samsung Electronic


Datasheets found :: 14624
Page: | 480 | 481 | 482 | 483 | 484 | 485 | 486 | 487 | 488 |



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