| No. |
Part Name |
Description |
Manufacturer |
| 14521 |
2N6514 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 14522 |
2N6515 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14523 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 14524 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14525 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14526 |
2N6515 |
Ic=500mA, Vce=10V transistor |
MCC |
| 14527 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 14528 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
| 14529 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14530 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 14531 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
| 14532 |
2N6516 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14533 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 14534 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14535 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14536 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14537 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14538 |
2N6517 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14539 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 14540 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14541 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14542 |
2N6517 |
Ic=500mA, Vce=10V transistor |
MCC |
| 14543 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 14544 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
| 14545 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14546 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14547 |
2N6517 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 14548 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14549 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14550 |
2N6517CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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