| No. |
Part Name |
Description |
Manufacturer |
| 14581 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14582 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14583 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14584 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14585 |
2N6517 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14586 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 14587 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14588 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14589 |
2N6517 |
Ic=500mA, Vce=10V transistor |
MCC |
| 14590 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 14591 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
| 14592 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14593 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14594 |
2N6517 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 14595 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14596 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14597 |
2N6517CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14598 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
| 14599 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
| 14600 |
2N6517TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14601 |
2N6518 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14602 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14603 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 14604 |
2N6518 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14605 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 14606 |
2N6518BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14607 |
2N6518TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14608 |
2N6519 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14609 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 14610 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
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