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Datasheets for 12K

Datasheets found :: 21333
Page: | 485 | 486 | 487 | 488 | 489 | 490 | 491 | 492 | 493 |
No. Part Name Description Manufacturer
14641 ST1230C12K2L Phase control thyristor International Rectifier
14642 ST1230C12K3 Phase control thyristor International Rectifier
14643 ST1230C12K3L Phase control thyristor International Rectifier
14644 ST7271N3B1 8-bit HCMOS MCU with EEPROM and TV/monitors dedicated functions, ROM=12K, RAM=256, EEPROM=512 SGS Thomson Microelectronics
14645 STM32100E-EVAL Evaluation board for STM32F100 (512KB Flash) Value Line MCUs ST Microelectronics
14646 STPay-J-D12-C Contact DDA Dynamic Java with 12Kbytes EEPROM ST Microelectronics
14647 STPAY-J-D12-DAX Dual Interface DDA Dynamic Java with 12Kbytes EEPROM ST Microelectronics
14648 STPay-J-D12D-AX Dual Interface DDA Dynamic Java with 12Kbytes EEPROM ST Microelectronics
14649 STPAY-JS-D12-CAC Contact DDA Static Java with 12Kbytes EEPROM ST Microelectronics
14650 STPAY-JS-D12-CAT Contact DDA Static Java with 12Kbytes EEPROM ST Microelectronics
14651 STPay-JS-D12C-AC Contact DDA Static Java with 12Kbytes EEPROM ST Microelectronics
14652 STPay-JS-D12C-AT Contact DDA Static Java with 12Kbytes EEPROM ST Microelectronics
14653 T. 050120, 050200 Pot capacitors, tag and flange mounting, 6KVp to 12KVp Vishay
14654 T10F12K Fast Switching Thyristor IPRS Baneasa
14655 T15V8M16A 512K X 16 LOW POWER CMOS STATIC RAM etc
14656 T15V8M16A-100C 512K X 16 LOW POWER CMOS STATIC RAM etc
14657 T15V8M16A-55S 512K X 16 LOW POWER CMOS STATIC RAM etc
14658 T15V8M16A-70C 512K X 16 LOW POWER CMOS STATIC RAM etc
14659 T16F12K Fast Switching Thyristor IPRS Baneasa
14660 T16N12K Mains frequency thyristor IPRS Baneasa
14661 T212K 200A 1200V THYRISTOR, anode is electrically connected to the metal case IPRS Baneasa
14662 T22F12K Fast Switching Thyristor IPRS Baneasa
14663 T22N12K Mains frequency thyristor IPRS Baneasa
14664 T431616A-7C 7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM TM Technology
14665 T431616A-7CI 7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM TM Technology
14666 T431616A-7S 7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM TM Technology
14667 T431616A-7SI 7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM TM Technology
14668 T512K 50A 1200V 50A/µs THYRISTOR, the anode is electrically connected to the metal case IPRS Baneasa
14669 TB28F400BVB80 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Intel
14670 TB28F400BVT80 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Intel


Datasheets found :: 21333
Page: | 485 | 486 | 487 | 488 | 489 | 490 | 491 | 492 | 493 |



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