No. |
Part Name |
Description |
Manufacturer |
14641 |
ST1230C12K2L |
Phase control thyristor |
International Rectifier |
14642 |
ST1230C12K3 |
Phase control thyristor |
International Rectifier |
14643 |
ST1230C12K3L |
Phase control thyristor |
International Rectifier |
14644 |
ST7271N3B1 |
8-bit HCMOS MCU with EEPROM and TV/monitors dedicated functions, ROM=12K, RAM=256, EEPROM=512 |
SGS Thomson Microelectronics |
14645 |
STM32100E-EVAL |
Evaluation board for STM32F100 (512KB Flash) Value Line MCUs |
ST Microelectronics |
14646 |
STPay-J-D12-C |
Contact DDA Dynamic Java with 12Kbytes EEPROM |
ST Microelectronics |
14647 |
STPAY-J-D12-DAX |
Dual Interface DDA Dynamic Java with 12Kbytes EEPROM |
ST Microelectronics |
14648 |
STPay-J-D12D-AX |
Dual Interface DDA Dynamic Java with 12Kbytes EEPROM |
ST Microelectronics |
14649 |
STPAY-JS-D12-CAC |
Contact DDA Static Java with 12Kbytes EEPROM |
ST Microelectronics |
14650 |
STPAY-JS-D12-CAT |
Contact DDA Static Java with 12Kbytes EEPROM |
ST Microelectronics |
14651 |
STPay-JS-D12C-AC |
Contact DDA Static Java with 12Kbytes EEPROM |
ST Microelectronics |
14652 |
STPay-JS-D12C-AT |
Contact DDA Static Java with 12Kbytes EEPROM |
ST Microelectronics |
14653 |
T. 050120, 050200 |
Pot capacitors, tag and flange mounting, 6KVp to 12KVp |
Vishay |
14654 |
T10F12K |
Fast Switching Thyristor |
IPRS Baneasa |
14655 |
T15V8M16A |
512K X 16 LOW POWER CMOS STATIC RAM |
etc |
14656 |
T15V8M16A-100C |
512K X 16 LOW POWER CMOS STATIC RAM |
etc |
14657 |
T15V8M16A-55S |
512K X 16 LOW POWER CMOS STATIC RAM |
etc |
14658 |
T15V8M16A-70C |
512K X 16 LOW POWER CMOS STATIC RAM |
etc |
14659 |
T16F12K |
Fast Switching Thyristor |
IPRS Baneasa |
14660 |
T16N12K |
Mains frequency thyristor |
IPRS Baneasa |
14661 |
T212K |
200A 1200V THYRISTOR, anode is electrically connected to the metal case |
IPRS Baneasa |
14662 |
T22F12K |
Fast Switching Thyristor |
IPRS Baneasa |
14663 |
T22N12K |
Mains frequency thyristor |
IPRS Baneasa |
14664 |
T431616A-7C |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
14665 |
T431616A-7CI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
14666 |
T431616A-7S |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
14667 |
T431616A-7SI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
14668 |
T512K |
50A 1200V 50A/µs THYRISTOR, the anode is electrically connected to the metal case |
IPRS Baneasa |
14669 |
TB28F400BVB80 |
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
14670 |
TB28F400BVT80 |
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
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