| No. |
Part Name |
Description |
Manufacturer |
| 14701 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 14702 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 14703 |
82325 |
Package Dimensions in mm |
Vishay |
| 14704 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 14705 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14706 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14707 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14708 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14709 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14710 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14711 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14712 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14713 |
8269 |
4-BIT comparator, is a functional and pin-for-pin replacement for the DM8200 |
Signetics |
| 14714 |
82CNQ030 |
30V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 14715 |
82CNQ030A |
30V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 14716 |
82CNQ030ASL |
30V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 14717 |
82CNQ030ASM |
30V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 14718 |
82CNQ030SL |
30V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 14719 |
82CNQ030SM |
30V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 14720 |
82PF120 |
1200V 80A Std. Recovery Diode in a DO-5 package |
International Rectifier |
| 14721 |
82PF120W |
1200V 80A Std. Recovery Diode in a DO-5 package |
International Rectifier |
| 14722 |
82PFR120 |
1200V 80A Std. Recovery Diode in a DO-5 package |
International Rectifier |
| 14723 |
82PFR120W |
1200V 80A Std. Recovery Diode in a DO-5 package |
International Rectifier |
| 14724 |
8302401EA |
8302401EA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 14725 |
8302401EC |
8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 14726 |
8302401EX |
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 14727 |
8302401FC |
8302401FC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 14728 |
8302401FX |
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 14729 |
8302401XA |
8302401XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 14730 |
8302401YA |
8302401YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
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