| No. |
Part Name |
Description |
Manufacturer |
| 1471 |
IT136-TO71 |
Monolithic Dual PNP General Purpose Amplifier |
Intersil |
| 1472 |
K7A203600 |
64Kx36-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 1473 |
K7A203600A |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) |
Samsung Electronic |
| 1474 |
K7A403601M |
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 1475 |
K7A403609A |
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 1476 |
K7B203625A |
64K x 36-Bit Synchronous Burst SRAM Rev. 3.0 (Dec. 1999) |
Samsung Electronic |
| 1477 |
K7B403625M |
128K x 36-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
| 1478 |
K7I161882B-FC16 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1479 |
K7I161882B-FC20 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1480 |
K7I161882B-FC25 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1481 |
K7I161882B-FC30 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1482 |
K7I163682B |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1483 |
K7I163682B-FC16 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1484 |
K7I163682B-FC20 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1485 |
K7I163682B-FC25 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1486 |
K7I163682B-FC30 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
Samsung Electronic |
| 1487 |
K7I323684M, K7I321884M, K7I320884M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDRII CIO b4 SRAM Data Sheet |
Samsung Electronic |
| 1488 |
K7M803625M |
256Kx36-Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 1489 |
K7N403601A |
128Kx36-Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 1490 |
K7N403609A |
128Kx36-Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 1491 |
K7N803645A |
256Kx36-Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 1492 |
K7Q323682M, K7Q321882M |
1Mx36-bit, 2Mx18-bit QDR� SRAM Data Sheet |
Samsung Electronic |
| 1493 |
K7R323682M, K7R321882M, K7R320882M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDR� II b2 SRAM Data Sheet |
Samsung Electronic |
| 1494 |
KA22136-D |
DUAL PRE-POWER AMP WITH VOLUME CONTROLLER |
Samsung Electronic |
| 1495 |
KA336-5.0 |
Voltage reference diode |
Samsung Electronic |
| 1496 |
KM736V687 |
64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP |
Samsung Electronic |
| 1497 |
KP1836-134 |
Polypropylene Film Capacitors Related Document: IEC 60384-17 Grade 1.2 |
Vishay |
| 1498 |
KP1836-134-G |
Polypropylene Film Capacitors Related Document: IEC 60384-17 Grade 1.2 |
Vishay |
| 1499 |
KP1836-134-V |
Polypropylene Film Capacitors Related Document: IEC 60384-17 Grade 1.2 |
Vishay |
| 1500 |
KP1836-168 |
Polypropylene Film Capacitors Related Document: IEC 60384-17 Grade 1.2 |
Vishay |
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