DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for ON MI

Datasheets found :: 29656
Page: | 46 | 47 | 48 | 49 | 50 | 51 | 52 | 53 | 54 |
No. Part Name Description Manufacturer
1471 74VHCT574ATTR OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING SGS Thomson Microelectronics
1472 74VHCT74A DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR SGS Thomson Microelectronics
1473 74VHCT74AM DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR SGS Thomson Microelectronics
1474 74VHCT74AMTR DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR SGS Thomson Microelectronics
1475 74VHCT74ATTR DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR SGS Thomson Microelectronics
1476 74VHCT86A QUAD EXCLUSIVE OR GATE SGS Thomson Microelectronics
1477 74VHCT86AM QUAD EXCLUSIVE OR GATE SGS Thomson Microelectronics
1478 74VHCT86AMTR QUAD EXCLUSIVE OR GATE SGS Thomson Microelectronics
1479 74VHCT86ATTR QUAD EXCLUSIVE OR GATE SGS Thomson Microelectronics
1480 74VHCU04 HEX INVERTER (SINGLE STAGE) SGS Thomson Microelectronics
1481 74VHCU04M HEX INVERTER (SINGLE STAGE) SGS Thomson Microelectronics
1482 74VHCU04MTR HEX INVERTER (SINGLE STAGE) SGS Thomson Microelectronics
1483 74VHCU04TTR HEX INVERTER (SINGLE STAGE) SGS Thomson Microelectronics
1484 80-2 VHF 175MHz 7.5V 0.75W NPN RF Transistor SGS Thomson Microelectronics
1485 80064 Hermetically sealed NPN power transistor featuring a unique matrix structure SGS Thomson Microelectronics
1486 80264 NPN power RF transistor designed for Class C linear applications 1-4GHz SGS Thomson Microelectronics
1487 80610-18 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
1488 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
1489 81150M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
1490 81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
1491 81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
1492 81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
1493 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
1494 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
1495 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1496 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1497 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1498 81550M High power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
1499 81600M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
1500 81720-20 Transistor for communications applications SGS Thomson Microelectronics


Datasheets found :: 29656
Page: | 46 | 47 | 48 | 49 | 50 | 51 | 52 | 53 | 54 |



© 2024 - www Datasheet Catalog com