No. |
Part Name |
Description |
Manufacturer |
1471 |
BD9E303EFJ-LB(E2) |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
1472 |
BD9E303EFJ-LB(H2) |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
1473 |
BD9E303EFJ-LBE2 |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
1474 |
BD9E303EFJ-LBH2 |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
1475 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
1476 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1477 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
1478 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
1479 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1480 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
1481 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
1482 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
1483 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
1484 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
1485 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
1486 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
1487 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
1488 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
1489 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
1490 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
1491 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1492 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
1493 |
BF1107 |
MOSFET N-channel switching transistor |
NXP Semiconductors |
1494 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
1495 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
1496 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
1497 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
1498 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
1499 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
1500 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
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