| No. |
Part Name |
Description |
Manufacturer |
| 1471 |
2SD118-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1472 |
2SD119 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1473 |
2SD119-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1474 |
2SD119-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1475 |
2SD119-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 1476 |
2SD1208 |
Silicon NPN triple diffused transistor, power regulator for line operated TV |
TOSHIBA |
| 1477 |
2SD120H |
Silicon NPN Diffused Junction Transistor, Medium Power Switching |
Hitachi Semiconductor |
| 1478 |
2SD121H |
Silicon NPN Diffused Junction Transistor, Medium Power Switching |
Hitachi Semiconductor |
| 1479 |
2SD124AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
| 1480 |
2SD125AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
| 1481 |
2SD126AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
| 1482 |
2SD1355 |
Silicon NPN triple diffused power transistor, complementary to 2SB995 |
TOSHIBA |
| 1483 |
2SD1356 |
Silicon NPN triple diffused power transistor, complementary to 2SB996 |
TOSHIBA |
| 1484 |
2SD1360 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
| 1485 |
2SD1361 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
| 1486 |
2SD1410 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. |
TOSHIBA |
| 1487 |
2SD1433 |
Silicon NPN triple diffused MESA high voltage transistor, color TV horizontal output applications |
TOSHIBA |
| 1488 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 1489 |
2SD1618 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat), NPN Single PCP |
ON Semiconductor |
| 1490 |
2SD1805 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
| 1491 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 1492 |
2SD2230 |
NPN epitaxial type silicon transistor, for low-frequenc |
NEC |
| 1493 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
| 1494 |
2SD234G |
Silicon NPN diffused junction power transistor, complementary to 2SB434G |
TOSHIBA |
| 1495 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
| 1496 |
2SD235G |
Silicon NPN diffused junction power transistor, complementary to 2SB435G |
TOSHIBA |
| 1497 |
2SD2399 |
Transistor,NPN,Darlington |
ROHM |
| 1498 |
2SD608 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 1499 |
2SD716 |
Silicon NPN triple diffused power transistor, complementary to 2SB686 |
TOSHIBA |
| 1500 |
2SD75AH |
Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
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