No. |
Part Name |
Description |
Manufacturer |
14791 |
2N6655/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
14792 |
2N6655/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
14793 |
2N6655A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
14794 |
2N6655A |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
14795 |
2N6655B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
14796 |
2N6655B |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
14797 |
2N6659 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
14798 |
2N6659 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
14799 |
2N6660 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
14800 |
2N6661 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
14801 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
14802 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
14803 |
2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
14804 |
2N6666 |
Leaded Power Transistor Darlington |
Central Semiconductor |
14805 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
14806 |
2N6666 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
14807 |
2N6667 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
14808 |
2N6667 |
Leaded Power Transistor Darlington |
Central Semiconductor |
14809 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
14810 |
2N6667 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
14811 |
2N6667-D |
Darlington Silicon Power Transistors |
ON Semiconductor |
14812 |
2N6668 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
14813 |
2N6668 |
Leaded Power Transistor Darlington |
Central Semiconductor |
14814 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
14815 |
2N6668 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
14816 |
2N6668 |
SILICON PNP POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
14817 |
2N6668 |
SILICON PNP POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
14818 |
2N6668 |
SILICON PNP POWER DARLINGTON TRANSISTOR |
ST Microelectronics |
14819 |
2N6671 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
14820 |
2N6671 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
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