| No. |
Part Name |
Description |
Manufacturer |
| 14821 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 14822 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 14823 |
2SC5414 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 14824 |
2SC5415 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 14825 |
2SC5419 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 14826 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 14827 |
2SC5432 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 14828 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 14829 |
2SC5433 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 14830 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 14831 |
2SC5434 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 14832 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 14833 |
2SC5435 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 14834 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 14835 |
2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 14836 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 14837 |
2SC5437 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 14838 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 14839 |
2SC5460 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 14840 |
2SC5463 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 14841 |
2SC5464 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 14842 |
2SC5464FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 14843 |
2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 14844 |
2SC547 |
Industrial Transistor Specification Table |
TOSHIBA |
| 14845 |
2SC547 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power Driver applications |
TOSHIBA |
| 14846 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 14847 |
2SC548 |
Industrial Transistor Specification Table |
TOSHIBA |
| 14848 |
2SC5488 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 14849 |
2SC5489 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 14850 |
2SC549 |
Industrial Transistor Specification Table |
TOSHIBA |
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