| No. |
Part Name |
Description |
Manufacturer |
| 14971 |
2N6427_D26Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14972 |
2N6427_D27Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14973 |
2N6427_D75Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
| 14974 |
2N6428 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14975 |
2N6428 |
Silicon NPN Transistor |
Motorola |
| 14976 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14977 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14978 |
2N6428A |
Silicon NPN Transistor |
Motorola |
| 14979 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14980 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14981 |
2N6429 |
Silicon NPN Transistor |
Motorola |
| 14982 |
2N6429A |
Silicon NPN Transistor |
Motorola |
| 14983 |
2N643 |
Germanium PNP Transistor |
Motorola |
| 14984 |
2N6430 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14985 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
| 14986 |
2N6430 |
Silicon NPN Transistor |
Motorola |
| 14987 |
2N6431 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14988 |
2N6431 |
Silicon NPN Transistor |
Motorola |
| 14989 |
2N6432 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14990 |
2N6432 |
Silicon PNP Transistor |
Motorola |
| 14991 |
2N6433 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 14992 |
2N6433 |
Silicon PNP Transistor |
Motorola |
| 14993 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 14994 |
2N6436 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
| 14995 |
2N6436 |
High-power PNP silicon transistor 200W 80V |
Motorola |
| 14996 |
2N6436 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 14997 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 14998 |
2N6436A |
Silicon PNP Power Transistor |
IPRS Baneasa |
| 14999 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 15000 |
2N6437 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
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