| No. |
Part Name |
Description |
Manufacturer |
| 14971 |
BF996SA |
N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14972 |
BF996SB |
N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14973 |
BF997 |
N-channel dual-gate MOS-FET |
Philips |
| 14974 |
BF998 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 14975 |
BF998 |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 14976 |
BF998 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 14977 |
BF998A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14978 |
BF998B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14979 |
BF998R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 14980 |
BF998R |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 14981 |
BF998R |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 14982 |
BF998RA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14983 |
BF998RAW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14984 |
BF998RB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14985 |
BF998RBW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 14986 |
BF998RW |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 14987 |
BF998WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 14988 |
BF998WR |
N-channel dual-gate MOS-FET |
Philips |
| 14989 |
BFM505 |
Dual NPN wideband transistor |
NXP Semiconductors |
| 14990 |
BFM505 |
Dual NPN wideband transistor |
Philips |
| 14991 |
BFM520 |
Dual NPN wideband transistor |
NXP Semiconductors |
| 14992 |
BFM520 |
Dual NPN wideband transistor |
Philips |
| 14993 |
BFP460 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 14994 |
BFR460L3 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 14995 |
BFS17S |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFS17W) for broadband amplifiers |
Infineon |
| 14996 |
BFS28 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 14997 |
BFS460L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 14998 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 14999 |
BFS466L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 15000 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
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