| No. |
Part Name |
Description |
Manufacturer |
| 14971 |
2SC785 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 14972 |
2SC785 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 14973 |
2SC786 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 14974 |
2SC787 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 14975 |
2SC787 |
Silicon NPN planar transistor, TV UHF amplifier applications |
TOSHIBA |
| 14976 |
2SC788 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 14977 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 14978 |
2SC828 |
Low Level and General Purpose Amplifier |
Micro Electronics |
| 14979 |
2SC829 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 14980 |
2SC830 |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output |
Hitachi Semiconductor |
| 14981 |
2SC863 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 14982 |
2SC864 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 14983 |
2SC900 |
LOW FREQUENCY, LOW NOISE AMPLIFIER |
USHA India LTD |
| 14984 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 14985 |
2SC9013 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION |
USHA India LTD |
| 14986 |
2SC9014 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE |
USHA India LTD |
| 14987 |
2SC9018 |
AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER |
USHA India LTD |
| 14988 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 14989 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 14990 |
2SC941 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 14991 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 14992 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 14993 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 14994 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 14995 |
2SC945 |
NPN Silicon Transistor(AF amplifier and low speed switching) |
NEC |
| 14996 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 14997 |
2SC979 |
Industrial Transistor Specification Table |
TOSHIBA |
| 14998 |
2SC979A |
Industrial Transistor Specification Table |
TOSHIBA |
| 14999 |
2SC980AG |
Industrial Transistor Specification Table |
TOSHIBA |
| 15000 |
2SC980G |
Industrial Transistor Specification Table |
TOSHIBA |
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