No. |
Part Name |
Description |
Manufacturer |
15001 |
Q62702-D948 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
15002 |
Q62702-D949 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
15003 |
Q62702-D950 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
15004 |
Q62702-D951 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
15005 |
Q62702-D952 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
15006 |
Q62702-D953 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
15007 |
Q62702-D954 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
15008 |
Q62702-D955 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
15009 |
Q62702-F1240 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
15010 |
Q62702-F1287 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
15011 |
Q62702-F517 |
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) |
Siemens |
15012 |
RCA3773 |
Silicon N-P-N epitaxial-base high power transistor. 160V, 150W. |
General Electric Solid State |
15013 |
RCA8638C |
Silicon N-P-N epitaxial-base high power transistor. 140V, 200W. |
General Electric Solid State |
15014 |
RCA8638D |
Silicon N-P-N epitaxial-base high power transistor. 120V, 200W. |
General Electric Solid State |
15015 |
RCA8638E |
Silicon N-P-N epitaxial-base high power transistor. 100V, 200W. |
General Electric Solid State |
15016 |
RCA9116C |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 200W. |
General Electric Solid State |
15017 |
RCA9116D |
Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. |
General Electric Solid State |
15018 |
RCA9116E |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 200W. |
General Electric Solid State |
15019 |
RCA9166A |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
15020 |
RCA9166B |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
15021 |
RE029 |
A dual mode Low Drop Out (LDO) voltage regulator macrocell with a fixed 1.8V output voltage, rated for loads of up to 80 mA and as low as 5 mA. A typical application is baseband memory in mobile terminals. |
Atmel |
15022 |
RECTIFIERS |
Basic circuit types application note |
RFT |
15023 |
RF TRANSISTOR DESIGN |
Chip fabrication, basic operation and main parameters, noise, parasitic elements, packaging |
SGS-ATES |
15024 |
RF-HDT-DVBB |
13.56-MHz Overmolded Transponder Based on Tag-it HF-I Plus Die 0-RFIDP -25 to 90 |
Texas Instruments |
15025 |
RF-HDT-DVBB-N1 |
13.56-MHz Overmolded Transponder Based on Tag-it HF-I Plus Die 0-RFIDP -25 to 90 |
Texas Instruments |
15026 |
RF-HDT-DVBB-N2 |
13.56-MHz Overmolded Transponder Based on Tag-it HF-I Plus Die 0-RFIDP -25 to 90 |
Texas Instruments |
15027 |
RF-HDT-DVBE |
13.56-MHz Overmolded Transponder based on Tag-it HF-I Standard die 0-RFIDP -25 to 90 |
Texas Instruments |
15028 |
RF-HDT-DVBE-N0 |
13.56-MHz Overmolded Transponder based on Tag-it HF-I Standard die 0-RFIDP -25 to 90 |
Texas Instruments |
15029 |
RF-HDT-DVBE-N2 |
13.56-MHz Overmolded Transponder based on Tag-it HF-I Standard die 0-RFIDP -25 to 90 |
Texas Instruments |
15030 |
RF2670 |
8MHZ DUAL BASEBAND AGC WITH PROGRAMMABLE LOW PASS FILTERING |
RF Micro Devices |
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