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Datasheets for BAS

Datasheets found :: 16212
Page: | 497 | 498 | 499 | 500 | 501 | 502 | 503 | 504 | 505 |
No. Part Name Description Manufacturer
15001 Q62702-D948 NPN SILICON EPIBASE TRANSISTORS Siemens
15002 Q62702-D949 PNP SILICON EPIBASE TRANSISTORS Siemens
15003 Q62702-D950 NPN SILICON EPIBASE TRANSISTORS Siemens
15004 Q62702-D951 PNP SILICON EPIBASE TRANSISTORS Siemens
15005 Q62702-D952 NPN SILICON EPIBASE TRANSISTORS Siemens
15006 Q62702-D953 PNP SILICON EPIBASE TRANSISTORS Siemens
15007 Q62702-D954 NPN SILICON EPIBASE TRANSISTORS Siemens
15008 Q62702-D955 PNP SILICON EPIBASE TRANSISTORS Siemens
15009 Q62702-F1240 NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) Siemens
15010 Q62702-F1287 NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) Siemens
15011 Q62702-F517 NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) Siemens
15012 RCA3773 Silicon N-P-N epitaxial-base high power transistor. 160V, 150W. General Electric Solid State
15013 RCA8638C Silicon N-P-N epitaxial-base high power transistor. 140V, 200W. General Electric Solid State
15014 RCA8638D Silicon N-P-N epitaxial-base high power transistor. 120V, 200W. General Electric Solid State
15015 RCA8638E Silicon N-P-N epitaxial-base high power transistor. 100V, 200W. General Electric Solid State
15016 RCA9116C Silicon P-N-P epitaxial-base high-power transistor. -140V, 200W. General Electric Solid State
15017 RCA9116D Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. General Electric Solid State
15018 RCA9116E Silicon P-N-P epitaxial-base high-power transistor. -100V, 200W. General Electric Solid State
15019 RCA9166A Silicon N-P-N epitaxial-base high power transistor. General Electric Solid State
15020 RCA9166B Silicon N-P-N epitaxial-base high power transistor. General Electric Solid State
15021 RE029 A dual mode Low Drop Out (LDO) voltage regulator macrocell with a fixed 1.8V output voltage, rated for loads of up to 80 mA and as low as 5 mA. A typical application is baseband memory in mobile terminals. Atmel
15022 RECTIFIERS Basic circuit types application note RFT
15023 RF TRANSISTOR DESIGN Chip fabrication, basic operation and main parameters, noise, parasitic elements, packaging SGS-ATES
15024 RF-HDT-DVBB 13.56-MHz Overmolded Transponder Based on Tag-it HF-I Plus Die 0-RFIDP -25 to 90 Texas Instruments
15025 RF-HDT-DVBB-N1 13.56-MHz Overmolded Transponder Based on Tag-it HF-I Plus Die 0-RFIDP -25 to 90 Texas Instruments
15026 RF-HDT-DVBB-N2 13.56-MHz Overmolded Transponder Based on Tag-it HF-I Plus Die 0-RFIDP -25 to 90 Texas Instruments
15027 RF-HDT-DVBE 13.56-MHz Overmolded Transponder based on Tag-it HF-I Standard die 0-RFIDP -25 to 90 Texas Instruments
15028 RF-HDT-DVBE-N0 13.56-MHz Overmolded Transponder based on Tag-it HF-I Standard die 0-RFIDP -25 to 90 Texas Instruments
15029 RF-HDT-DVBE-N2 13.56-MHz Overmolded Transponder based on Tag-it HF-I Standard die 0-RFIDP -25 to 90 Texas Instruments
15030 RF2670 8MHZ DUAL BASEBAND AGC WITH PROGRAMMABLE LOW PASS FILTERING RF Micro Devices


Datasheets found :: 16212
Page: | 497 | 498 | 499 | 500 | 501 | 502 | 503 | 504 | 505 |



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