| No. |
Part Name |
Description |
Manufacturer |
| 1501 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 1502 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 1503 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 1504 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 1505 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 1506 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 1507 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 1508 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 1509 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 1510 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 1511 |
2N651A |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
| 1512 |
2N652 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
| 1513 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 1514 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 1515 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 1516 |
2N652A |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
| 1517 |
2N653 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 1518 |
2N654 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 1519 |
2N655 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 1520 |
2N6557 |
Trans GP BJT NPN 250V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 1521 |
2N6558 |
Trans GP BJT NPN 300V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 1522 |
2N6559 |
Trans GP BJT NPN 350V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 1523 |
2N658 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 1524 |
2N659 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 1525 |
2N6660 |
Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD |
New Jersey Semiconductor |
| 1526 |
2N6661 |
Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 |
New Jersey Semiconductor |
| 1527 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
| 1528 |
2N6705 |
0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 1529 |
2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 1530 |
2N6708 |
0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
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