| No. |
Part Name |
Description |
Manufacturer |
| 1501 |
PMEG4002ELD |
40 V, 0.2 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 1502 |
PMEG4002ESF |
40 V, 0.2 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 1503 |
PMEG4002ESF |
40 V, 0.2 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 1504 |
PMEG6002ELD |
60 V, 0.2 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 1505 |
PMEG6002ELD |
60 V, 0.2 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 1506 |
PN4122 |
Trans GP BJT PNP 40V 0.2A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1507 |
PN4275 |
Trans GP BJT NPN 15V 0.2A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1508 |
Q62702-F1296 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1509 |
Q62702-F1377 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1510 |
Q62702-F1490 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1511 |
Q62702-F1500 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1512 |
QPA9219 |
1930 - 1995 MHz, 0.25 Watt High Linearity Small Cell Power Amplifier |
Qorvo |
| 1513 |
QPA9226 |
2500 - 2700 MHz, 0.25 Watt High Linearity Small Cell Power Amplifier |
Qorvo |
| 1514 |
QPC6713 |
50 - 6000 MHz Serial Controlled Digital Step Attenuator, 7-Bit, 0.25 dB Steps |
Qorvo |
| 1515 |
R1200 |
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) |
Rectron Semiconductor |
| 1516 |
R1200F |
HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) |
Rectron Semiconductor |
| 1517 |
R1500 |
1500 V, 0.2 A high voltage diode |
Leshan Radio Company |
| 1518 |
R1500 |
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) |
Rectron Semiconductor |
| 1519 |
R1500F |
HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) |
Rectron Semiconductor |
| 1520 |
R1800 |
1800 V, 0.2 A high voltage diode |
Leshan Radio Company |
| 1521 |
R1800 |
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) |
Rectron Semiconductor |
| 1522 |
R1800F |
HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) |
Rectron Semiconductor |
| 1523 |
R1868-01 |
Spectral responce: 300 to 650nm; 3000Vdc; anode current: 0.2mA; photomultiplier tube |
Hamamatsu Corporation |
| 1524 |
R2000 |
2000 V, 0.2 A high voltage diode |
Leshan Radio Company |
| 1525 |
R2000 |
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) |
Rectron Semiconductor |
| 1526 |
R2000F |
HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere) |
Rectron Semiconductor |
| 1527 |
R2500 |
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 2500 to 5000 Volts CURRENT 0.2 Ampere) |
Rectron Semiconductor |
| 1528 |
R2500F |
HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 2500 to 5000 Volts CURRENT 0.2 Ampere) |
Rectron Semiconductor |
| 1529 |
R3000 |
3000 V, 0.2 A high voltage diode |
Leshan Radio Company |
| 1530 |
R3000 |
HIGH VOLTAGE SILICON RECTIFIER (VOLTAGE RANGE 2500 to 5000 Volts CURRENT 0.2 Ampere) |
Rectron Semiconductor |
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