| No. |
Part Name |
Description |
Manufacturer |
| 1501 |
PS7200B-1A |
4-PIN SOP 1.0 W LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET |
NEC |
| 1502 |
PS7200B-1A-E3 |
4-PIN SOP 1.0 W LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET |
NEC |
| 1503 |
PS7200B-1A-E4 |
4-PIN SOP 1.0 W LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET |
NEC |
| 1504 |
PS7200B-1A-F3 |
4-PIN SOP 1.0 W LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET |
NEC |
| 1505 |
PS7200B-1A-F4 |
4-PIN SOP 1.0 W LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET |
NEC |
| 1506 |
PS7214-1A |
4 PIN SOP / 1.0 LOW ON-STATE RESISTANCE 1-CH OPTICAL COUPLED MOSFET |
NEC |
| 1507 |
PS7214-1A-E3 |
4 PIN SOP / 1.0 LOW ON-STATE RESISTANCE 1-CH OPTICAL COUPLED MOSFET |
NEC |
| 1508 |
PS7214-1A-E4 |
4 PIN SOP / 1.0 LOW ON-STATE RESISTANCE 1-CH OPTICAL COUPLED MOSFET |
NEC |
| 1509 |
PS7214-1A-F3 |
4 PIN SOP / 1.0 LOW ON-STATE RESISTANCE 1-CH OPTICAL COUPLED MOSFET |
NEC |
| 1510 |
PS7214-1A-F4 |
4 PIN SOP / 1.0 LOW ON-STATE RESISTANCE 1-CH OPTICAL COUPLED MOSFET |
NEC |
| 1511 |
PS72141 |
4 PIN SOP / 1.0 LOW ON-STATE RESISTANCE 1-CH OPTICAL COUPLED MOSFET |
NEC |
| 1512 |
PSMN1R0-25YLD |
N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
| 1513 |
PSMN1R0-30YLD |
N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Nexperia |
| 1514 |
PSMN1R0-30YLD |
N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
NXP Semiconductors |
| 1515 |
PSMNR90-30BL |
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK |
Nexperia |
| 1516 |
PSMNR90-30BL |
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK |
NXP Semiconductors |
| 1517 |
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 1518 |
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 1519 |
PTF10031 |
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 1520 |
PTF10052 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 1521 |
PTF10136 |
6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 1522 |
PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 1523 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1524 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1525 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1526 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1527 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1528 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1529 |
Q62702-P1617 |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product |
Siemens |
| 1530 |
Q62702-P1630 |
Laser Diode in TO-220 Package 1.0 W cw Class 4 Laser Product |
Siemens |
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