| No. |
Part Name |
Description |
Manufacturer |
| 1501 |
IRF820 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1502 |
IRF820 |
2.5A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET |
Intersil |
| 1503 |
IRF820 |
N - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 1504 |
IRF820 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A |
Siliconix |
| 1505 |
IRF820 |
N-CHANNEL 500V - 2.5 OHM - 4A - TO-220 POWERMESH II MOSFET |
ST Microelectronics |
| 1506 |
IRF820A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1507 |
IRF820AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 1508 |
IRF820APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1509 |
IRF820AS |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 1510 |
IRF820ASTRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 1511 |
IRF820ASTRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 1512 |
IRF820B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
| 1513 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
| 1514 |
IRF820PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1515 |
IRF820S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 1516 |
IRF820STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 1517 |
IRF820STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 1518 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 1519 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
| 1520 |
IRF822 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A |
Siliconix |
| 1521 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
| 1522 |
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 1523 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 1524 |
IRF830 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1525 |
IRF830 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 1526 |
IRF830 |
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 1527 |
IRF830 |
N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 1528 |
IRF830 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
| 1529 |
IRF830 |
N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFET |
ST Microelectronics |
| 1530 |
IRF830A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| | | |
