No. |
Part Name |
Description |
Manufacturer |
1501 |
DRA2TE |
2.0A Reverse Blocking Thyristor |
SANYO |
1502 |
DRA2TG |
2.0A Reverse Blocking Thyristor |
SANYO |
1503 |
DRA5 |
5.0A Reverse Blocking Thyristor |
SANYO |
1504 |
DRA8 |
8.0A Reverse Blocking Thyristor |
SANYO |
1505 |
DRD3 |
3.0A Reverse Blocking Thyristor |
SANYO |
1506 |
DRD3B |
3.0A Reverse Blocking Thyristor |
SANYO |
1507 |
DRD3C |
3.0A Reverse Blocking Thyristor |
SANYO |
1508 |
DRD3E |
3.0A Reverse Blocking Thyristor |
SANYO |
1509 |
DRD3G |
3.0A Reverse Blocking Thyristor |
SANYO |
1510 |
DRE3 |
3.0A Reverse Blocking Thyristor |
SANYO |
1511 |
DRE3B |
3.0A Reverse Blocking Thyristor |
SANYO |
1512 |
DRE3C |
3.0A Reverse Blocking Thyristor |
SANYO |
1513 |
DRE3E |
3.0A Reverse Blocking Thyristor |
SANYO |
1514 |
DRE3G |
3.0A Reverse Blocking Thyristor |
SANYO |
1515 |
DS1616 |
Temperature and Three Input MUXed 8-bit Data Recorder |
Dallas Semiconductor |
1516 |
DS1616 |
Temperature and Three Input MUX'ed 8-bit Data Recorder |
MAXIM - Dallas Semiconductor |
1517 |
DS1616S |
Temperature and Three Input MUXed 8-bit Data Recorder |
Dallas Semiconductor |
1518 |
DS1616S |
Temperature and Three Input MUX��ed 8-bit Data Recorder |
MAXIM - Dallas Semiconductor |
1519 |
DS28E80 |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
1520 |
DS28E80P+TW |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
1521 |
DS28E80P+W |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
1522 |
DS28E80Q+T |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
1523 |
DS28E80Q+TW |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
1524 |
DS28E80Q+U |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
1525 |
DS28E80Q+UW |
Gamma Radiation Resistant 1-Wire Memory |
MAXIM - Dallas Semiconductor |
1526 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
1527 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1528 |
EB107 |
Application Note - Mounting considerations for Motorola RF power modules |
Motorola |
1529 |
EL5128 |
Dual VCOM Amplifier and Gamma Reference Buffer |
Intersil |
1530 |
ER400TRS |
LPRS Prelimina ry Data Sheet |
etc |
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