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Datasheets for AR TRANSIST

Datasheets found :: 5754
Page: | 47 | 48 | 49 | 50 | 51 | 52 | 53 | 54 | 55 |
No. Part Name Description Manufacturer
1501 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1502 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1503 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1504 8550 PNP EPITAXIAL SILICON PLANAR TRANSISTOR Micro Electronics
1505 8550D PNP cpitaxial silicon planar transistor Micro Electronics
1506 8550SS-C TO-92 Plastic-Encapsulate Biploar Transistors Micro Commercial Components
1507 8550SS-D TO-92 Plastic-Encapsulate Biploar Transistors Micro Commercial Components
1508 9018 NPN EPITAXIAL PLANAR TRANSISTOR Unisonic Technologies
1509 A1015 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics
1510 AM0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
1511 AM0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
1512 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1513 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1514 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1515 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1516 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1517 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
1518 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1519 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1520 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1521 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1522 AN-860 Application Note - Power MOSFETs versus BIPOLAR TRANSISTORS Motorola
1523 AN1509 A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR SGS Thomson Microelectronics
1524 APPLICATION NOTE 860 Power MOSFETs versus Bipolar Transistors Motorola
1525 AT-30511 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
1526 AT-30511-BLK Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
1527 AT-30511-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
1528 AT-30511BLK Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
1529 AT-30511TR1 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
1530 AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)


Datasheets found :: 5754
Page: | 47 | 48 | 49 | 50 | 51 | 52 | 53 | 54 | 55 |



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