No. |
Part Name |
Description |
Manufacturer |
1501 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1502 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1503 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1504 |
8550 |
PNP EPITAXIAL SILICON PLANAR TRANSISTOR |
Micro Electronics |
1505 |
8550D |
PNP cpitaxial silicon planar transistor |
Micro Electronics |
1506 |
8550SS-C |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
1507 |
8550SS-D |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
1508 |
9018 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Unisonic Technologies |
1509 |
A1015 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
1510 |
AM0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
1511 |
AM0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
1512 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1513 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1514 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1515 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1516 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
1517 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
1518 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1519 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1520 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1521 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
1522 |
AN-860 |
Application Note - Power MOSFETs versus BIPOLAR TRANSISTORS |
Motorola |
1523 |
AN1509 |
A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR |
SGS Thomson Microelectronics |
1524 |
APPLICATION NOTE 860 |
Power MOSFETs versus Bipolar Transistors |
Motorola |
1525 |
AT-30511 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1526 |
AT-30511-BLK |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1527 |
AT-30511-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1528 |
AT-30511BLK |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1529 |
AT-30511TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
1530 |
AT-30533 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
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