| No. |
Part Name |
Description |
Manufacturer |
| 1501 |
2N5061 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 1502 |
2N5062 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 1503 |
2N5063 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 1504 |
2N5064 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 1505 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
| 1506 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 1507 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
| 1508 |
2N5179 |
NPN SILICON PLANAR TRANSISTOR |
Boca Semiconductor Corporation |
| 1509 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 1510 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 1511 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 1512 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 1513 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 1514 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 1515 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 1516 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 1517 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 1518 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 1519 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 1520 |
2N5367(R) |
PNP SILICON PLANAR TRANSISTOR |
Micro Electronics |
| 1521 |
2N5496 |
50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE |
Continental Device India Limited |
| 1522 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 1523 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 1524 |
2N5589 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 1525 |
2N5590 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 1526 |
2N5591 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 1527 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 1528 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 1529 |
2N5770 |
0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE |
Continental Device India Limited |
| 1530 |
2N5770 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
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