No. |
Part Name |
Description |
Manufacturer |
1501 |
2SD118-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
1502 |
2SD119 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
1503 |
2SD119-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
1504 |
2SD119-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
1505 |
2SD119-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
1506 |
2SD1208 |
Silicon NPN triple diffused transistor, power regulator for line operated TV |
TOSHIBA |
1507 |
2SD120H |
Silicon NPN Diffused Junction Transistor, Medium Power Switching |
Hitachi Semiconductor |
1508 |
2SD121H |
Silicon NPN Diffused Junction Transistor, Medium Power Switching |
Hitachi Semiconductor |
1509 |
2SD124AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
1510 |
2SD125AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
1511 |
2SD126AH |
Silicon NPN Diffused Junction Transistor, High Power Switching |
Hitachi Semiconductor |
1512 |
2SD1355 |
Silicon NPN triple diffused power transistor, complementary to 2SB995 |
TOSHIBA |
1513 |
2SD1356 |
Silicon NPN triple diffused power transistor, complementary to 2SB996 |
TOSHIBA |
1514 |
2SD1360 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
1515 |
2SD1361 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
1516 |
2SD1410 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. |
TOSHIBA |
1517 |
2SD1433 |
Silicon NPN triple diffused MESA high voltage transistor, color TV horizontal output applications |
TOSHIBA |
1518 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
1519 |
2SD1618 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat), NPN Single PCP |
ON Semiconductor |
1520 |
2SD1805 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
1521 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
1522 |
2SD2230 |
NPN epitaxial type silicon transistor, for low-frequenc |
NEC |
1523 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
1524 |
2SD234G |
Silicon NPN diffused junction power transistor, complementary to 2SB434G |
TOSHIBA |
1525 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
1526 |
2SD235G |
Silicon NPN diffused junction power transistor, complementary to 2SB435G |
TOSHIBA |
1527 |
2SD2399 |
Transistor,NPN,Darlington |
ROHM |
1528 |
2SD608 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
1529 |
2SD716 |
Silicon NPN triple diffused power transistor, complementary to 2SB686 |
TOSHIBA |
1530 |
2SD734 |
NPN Epitaxial Planar Silicon Transistor 1W AF Output, Electronic Governor, DC-DC Converter Applications |
SANYO |
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