| No. |
Part Name |
Description |
Manufacturer |
| 1501 |
BDY12-10 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1502 |
BDY12-16 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1503 |
BDY12-6 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1504 |
BDY13 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1505 |
BDY13-10 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1506 |
BDY13-16 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1507 |
BDY13-6 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1508 |
BDY34 |
Silicon NPN epitaxial planar transistor for AF power stages, power amplifier stages and relaise-driver stages |
AEG-TELEFUNKEN |
| 1509 |
BDY39 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 1510 |
BDY39 paired |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 1511 |
BDY39-4 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 1512 |
BDY39-6 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 1513 |
BDY55 |
NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) |
Comset Semiconductors |
| 1514 |
BDY56 |
NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) |
Comset Semiconductors |
| 1515 |
BF137 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 1516 |
BF257 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 1517 |
BF258 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 1518 |
BF259 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 1519 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 1520 |
BFP136 |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 1521 |
BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems |
Infineon |
| 1522 |
BFP136W |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 1523 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1524 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1525 |
BFP280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1526 |
BFP280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1527 |
BFP450 |
RF-Bipolar - NPN Silicon RF transistor for medium power amplifiers |
Infineon |
| 1528 |
BFP450 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 1529 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
| 1530 |
BFR180 |
RF-Bipolar - NPN Silicon RF transistor for low power amplifiers |
Infineon |
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