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Datasheets for SE,

Datasheets found :: 11537
Page: | 47 | 48 | 49 | 50 | 51 | 52 | 53 | 54 | 55 |
No. Part Name Description Manufacturer
1501 B125C1500G Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A Vishay
1502 B250C1500G Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A Vishay
1503 B380C1500G Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A Vishay
1504 B40C1500G Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A Vishay
1505 B80C1500G Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A Vishay
1506 BCY69 Silicon NPN transistor, low noise, low level amplification SESCOSEM
1507 BD142 General purpose NPN transistor - metal case, high power IPRS Baneasa
1508 BD181 General purpose NPN transistor - metal case, high power IPRS Baneasa
1509 BD182 General purpose NPN transistor - metal case, high power IPRS Baneasa
1510 BD183 General purpose NPN transistor - metal case, high power IPRS Baneasa
1511 BD233 NPN silicon, epibase, planar power transistor Mikroelektronikai Vallalat
1512 BD433 NPN silicon, epibase, power transistor Mikroelektronikai Vallalat
1513 BD435 NPN silicon, epibase, power transistor Mikroelektronikai Vallalat
1514 BD795 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. General Electric Solid State
1515 BD796 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. General Electric Solid State
1516 BD797 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. General Electric Solid State
1517 BD798 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. General Electric Solid State
1518 BD799 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. General Electric Solid State
1519 BD800 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. General Electric Solid State
1520 BD801 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. General Electric Solid State
1521 BD802 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -100V, 65W. General Electric Solid State
1522 BDY73 NPN silicon, epibase, mesa transistor Mikroelektronikai Vallalat
1523 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
1524 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
1525 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
1526 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
1527 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
1528 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
1529 BF1012W SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
1530 BF179C Silicon NPN transistor, low noise, low level amplification SESCOSEM


Datasheets found :: 11537
Page: | 47 | 48 | 49 | 50 | 51 | 52 | 53 | 54 | 55 |



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