No. |
Part Name |
Description |
Manufacturer |
1501 |
B125C1500G |
Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A |
Vishay |
1502 |
B250C1500G |
Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A |
Vishay |
1503 |
B380C1500G |
Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A |
Vishay |
1504 |
B40C1500G |
Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A |
Vishay |
1505 |
B80C1500G |
Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A |
Vishay |
1506 |
BCY69 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
1507 |
BD142 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
1508 |
BD181 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
1509 |
BD182 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
1510 |
BD183 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
1511 |
BD233 |
NPN silicon, epibase, planar power transistor |
Mikroelektronikai Vallalat |
1512 |
BD433 |
NPN silicon, epibase, power transistor |
Mikroelektronikai Vallalat |
1513 |
BD435 |
NPN silicon, epibase, power transistor |
Mikroelektronikai Vallalat |
1514 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
1515 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
1516 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
1517 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
1518 |
BD799 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. |
General Electric Solid State |
1519 |
BD800 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. |
General Electric Solid State |
1520 |
BD801 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. |
General Electric Solid State |
1521 |
BD802 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -100V, 65W. |
General Electric Solid State |
1522 |
BDY73 |
NPN silicon, epibase, mesa transistor |
Mikroelektronikai Vallalat |
1523 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1524 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1525 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
1526 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
1527 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
1528 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1529 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
1530 |
BF179C |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| | | |